Milliwatt output levels and superquadratic bias dependence in a low-temperature-grown GaAs photomixer

Applied Physics Letters

Volumn 64, Issue 24, 1994, Pages 3311-3313

  Brown, E R ^a   McIntosh, K A ^a   Smith, F W ^a   Nichols, K B ^a   Manfra, M J ^a   Dennis, C L ^a   Mattia, J P ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC SPACE CHARGE; ELECTRODES; ELECTRON TUNNELING; ENERGY GAP; LOW TEMPERATURE OPERATIONS; OPTICAL FREQUENCY CONVERSION; PUMPING (LASER); SEMICONDUCTING GALLIUM ARSENIDE; SOLID STATE LASERS;

BIAS VOLTAGE; DARK CURRENTS; INTERDIGITATED ELECTRODE; MILLIWATT OUTPUT; PHOTOCURRENTS; PHOTOMIXER; RECOMBINATION LIMITED TRANSPORT; SUPERQUADRATIC BIAS DEPENDENCE; THERMAL BURNOUT; ZENER TUNNELING;

ELECTROOPTICAL DEVICES;

EID: 0028443726     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.111289     Document Type: Article

References (0)