Sharp-line photoluminescence of excitons localized at GaAs/AlGaAs quantum well inhomogeneities

Applied Physics Letters

Volumn 64, Issue 24, 1994, Pages 3320-3322

  Brunner, K ^a   Abstreiter, G ^a   Bohm G ^a   Trankle G ^a   Weimann, G ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CRYSTAL DEFECTS; ENERGY GAP; EXCITONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS;

ALUMINUM GALLIUM ARSENIDE; GROWTH INTERRUPTIONS; PHOTOLUMINESCENCE EXCITATION; PHOTOLUMINESCENCE SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0028443005     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.111265     Document Type: Article

References (0)