Periodic changes in SiO2/Si(111) interface structures with progress of thermal oxidation

Japanese Journal of Applied Physics

Volumn 33, Issue 5, 1994, Pages L675-L678

  Ohishi, Kazuaki ^a   Hattori, Takeo ^a  

^a TOKYO CITY UNIVERSITY   (Japan)

Author keywords

Interface formation; Layer by layer oxidation; Oxidation mechanism; SiO2 Si interface; Thermal oxidation; X ray photoelectron spectra

Indexed keywords

CONTAMINATION; OXYGEN; PEROXIDES; PHOTOELECTRON SPECTROSCOPY; SILICA; SILICON; SURFACES; THERMOOXIDATION; VACUUM; X RAY SPECTROSCOPY;

DEW POINTS; PHOTOELECTRON TAKE OFF ANGLE; SAMPLE ANALYSIS CHAMBER; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACES (MATERIALS);

EID: 0028441645     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.33.L675     Document Type: Article

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