Preparation of cugase2 heteroepitaxial layers by metalorganic molecular beam epitaxy

Japanese Journal of Applied Physics

Volumn 33, Issue 5, 1994, Pages L739-L742

  Shirakata, Sho ^a   Morita, Kazuo ^a   Isomura, Shigehiro ^a  

^a EHIME UNIVERSITY   (Japan)

Author keywords

Chalcopyrite semiconductors; Epitaxial layer of CuGaSe2; Metalorganic molecular beam epitaxy; Photoluminescence; Photoreflectance

Indexed keywords

COPPER COMPOUNDS; FILM GROWTH; LIGHT MEASUREMENT; LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; PHOSPHORUS COMPOUNDS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; X RAY ANALYSIS;

CHALCOPYRITE; HETEROEPITAXIAL LAYERS; PHOTOREFLECTANCE; X RAY DIFFRACTION;

SEMICONDUCTING FILMS;

EID: 0028440843     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.33.L739     Document Type: Article

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