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Volumn 141, Issue 5, 1994, Pages 1351-1356
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Thermal Stability Limits of Thin TiSi2: Effect on Submicron Line Resistance and Shallow Junction Leakage
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Author keywords
crystal microstructure; electric properties leakage currents; high temperature effects integrated circuit technology; p n junctions; thin films
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Indexed keywords
AGGLOMERATION;
ANNEALING;
ELECTRIC RESISTANCE;
METALLOGRAPHIC MICROSTRUCTURE;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTOR JUNCTIONS;
SINTERING;
SPECTROSCOPIC ANALYSIS;
THERMODYNAMIC STABILITY;
THICKNESS MEASUREMENT;
THIN FILMS;
TRANSMISSION ELECTRON MICROSCOPY;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SHALLOW JUNCTION LEAKAGE;
SILICIDE STABILITY;
SUBMICRON LINE RESISTANCE;
THERMAL STABILITY LIMIT;
TITANIUM COMPOUNDS;
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EID: 0028436587
PISSN: 00134651
EISSN: 19457111
Source Type: Journal
DOI: 10.1149/1.2054922 Document Type: Article |
Times cited : (23)
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References (10)
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