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Volumn 141, Issue 5, 1994, Pages 1351-1356

Thermal Stability Limits of Thin TiSi2: Effect on Submicron Line Resistance and Shallow Junction Leakage

Author keywords

crystal microstructure; electric properties leakage currents; high temperature effects integrated circuit technology; p n junctions; thin films

Indexed keywords

AGGLOMERATION; ANNEALING; ELECTRIC RESISTANCE; METALLOGRAPHIC MICROSTRUCTURE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR JUNCTIONS; SINTERING; SPECTROSCOPIC ANALYSIS; THERMODYNAMIC STABILITY; THICKNESS MEASUREMENT; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0028436587     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2054922     Document Type: Article
Times cited : (23)

References (10)
  • 2
    • 84975380995 scopus 로고
    • S. M. Sze, Editor, Wiley-Interscience, New York
    • J. Brews, in High Speed Semiconductor Devices, S. M. Sze, Editor, pp. 141-143, Wiley-Interscience, New York (1990).
    • (1990) High Speed Semiconductor Devices , pp. 141-143
    • Brews, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.