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IEEE Transactions on Electron Devices

Volumn 41, Issue 5, 1994, Pages 721-725

A Flat-Aluminum Based Voltage-Programmable Link for Field-Programmable Devices

(4) Cohen, S S a Gleason, E F a Wyatt, P W a Raffel, J I a

a MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; CAPACITANCE; CAPACITORS; CHEMICAL VAPOR DEPOSITION; ELECTRIC INSULATORS; LOGIC GATES; METALLIC FILMS; METALLIZING; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; SILICON NITRIDE; TITANIUM;

FIELD PROGRAMMABLE DEVICES; HILLOCK FORMATION; METAL INSULATOR METAL STRUCTURE; VOLTAGE PROGRAMMABLE LINK;

MIM DEVICES;

EID: 0028427981 PISSN: 00189383 EISSN: 15579646 Source Type: Journal
DOI: 10.1109/16.285023 Document Type: Article

Times cited : (6)

References (8)

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2
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- Cristina Gabriel, M.¹ Adler, D.²

4
- 0026912595
- A novel double-metal structure for voltage-programmable links
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- Cohen, S.S.¹ Raffel, J.I.² Wyatt, P.W.³

5
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- Shen, B.W.¹ Bonifield, T.² McPherson, J.³

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7
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