Comparison of Ultralow Specific On-Resistance UMOSFET Structures: The ACCUFET, EXTFET, INVFET. and Conventional UMOSFET's

IEEE Transactions on Electron Devices

Volumn 41, Issue 5, 1994, Pages 800-808

  Syau, Tsengyou ^a   Venkatraman, Prasad ^a   Baliga, B Jayant ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); MOSFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS;

ACCUMULATION FIELD EFFECT TRANSISTOR; CURRENT CONDUCTION; EXTENDED TRENCH FIELD EFFECT TRANSISTOR; GATE BIAS; INVERSION FIELD EFFECT TRANSISTOR; POWER UMOSFET STRUCTURES; RECTIFICATION; TRENCH GATE SURFACE; ULTRALOW SPECIFIC ON RESISTANCE; VERTICAL CHANNEL;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0028427219     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.285034     Document Type: Article

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