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Volumn 41, Issue 5, 1994, Pages 703-708

Silicon Nitride Thin-Film Deposition by LPCVD with In Situ HF Vapor Cleaning and Its Application to Stacked DRAM Capacitor Fabrication

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CHEMICAL VAPOR DEPOSITION; CLEANING; COMPOSITION; DIELECTRIC FILMS; FILM GROWTH; INFRARED SPECTROSCOPY; RANDOM ACCESS STORAGE; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0028424837     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.285020     Document Type: Article
Times cited : (22)

References (15)
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  • 5
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    • N. Ajika, M. Ohi, H. Arima, T. Matukawa, and N. Tsubouchi, “Enhanced reliability of native oxide free capacitor dielectrics on rapid thermal nitrided polysilicon,” Symp. on VLSI Tech. Dig., pp. 63, 1991.
    • (1991) Symp. on VLSI Tech. Dig.
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  • 6
    • 0000880380 scopus 로고
    • Ultrathin silicon nitride films prepared by combining rapid thermal nitridation with low-pressure chemical vapor deposition
    • K. Ando, A. Ishitani, and K. Hamano, “Ultrathin silicon nitride films prepared by combining rapid thermal nitridation with low-pressure chemical vapor deposition,” Appl. Phys. Lett., vol. 59, 1081, 1991.
    • (1991) Appl. Phys. Lett. , vol.59
    • Ando, K.1    Ishitani, A.2    Hamano, K.3
  • 8
    • 0025576745 scopus 로고
    • Rugged surface poly-Si electrode and low temperature deposited Si3N4 for 64 Mbit and beyond STC DRAM cell
    • M. Yoshimaru, J. Miyano, N. Inoue, A. Sakamoto, S. You, H. Tamura, and M. Ino, “Rugged surface poly-Si electrode and low temperature deposited Si3N4 for 64 Mbit and beyond STC DRAM cell,” IEDM Tech. Dig., p. 659, 1990.
    • (1990) IEDM Tech. Dig. , pp. 659
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  • 11
    • 84919087917 scopus 로고
    • An attempt at AES evaluation of the composition of off-stoichiometric silicon nitride
    • S. Thomas and R. J. Mattox, “An attempt at AES evaluation of the composition of off-stoichiometric silicon nitride,” J. Electrochem. Soc., vol. 124, p. 1942, 1977.
    • (1977) J. Electrochem. Soc. , vol.124 , pp. 1942
    • Thomas, S.1    Mattox, R.J.2
  • 13
    • 0020721626 scopus 로고
    • Compositional depth profile on a native oxide LPCVD MNOS structure using X-ray photoelectron spectroscopy and chemical etching
    • J. A. Wurzbach and F. J. Grunthaner, “Compositional depth profile on a native oxide LPCVD MNOS structure using X-ray photoelectron spectroscopy and chemical etching,” J. Electrochem. Soc., vol. 130, p. 691, 1983.
    • (1983) J. Electrochem. Soc. , vol.130 , pp. 691
    • Wurzbach, J.A.1    Grunthaner, F.J.2
  • 14
    • 0037815147 scopus 로고
    • Lorentz-Lorenz correlation for reactively plasma deposited Si-N films
    • A. K. Sinha and E. Lugujjo, “Lorentz-Lorenz correlation for reactively plasma deposited Si-N films,” Appl. Phys. Lett., vol. 32, p. 245, 1978.
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    • Sinha, A.K.1    Lugujjo, E.2
  • 15
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    • Thermally grown Si3N4thin films on Si(100): Surface and interfacial composition
    • C. H. F. Peden, J. W. Rogers, Jr., N. D. Shinn, K. B. Kidd, and K. L. Tsang, “Thermally grown Si3N4thin films on Si(100): Surface and interfacial composition,” Phys. Rev. B, vol. 47, no. 23, 15, p. 622, 1993-1.
    • (1993) Phys. Rev. B , vol.47 , Issue.23 , pp. 622
    • Peden, C.H.F.1    Rogers, J.W.2    Shinn, N.D.3    Kidd, K.B.4    Tsang, K.L.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.