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Volumn 64, Issue 21, 1994, Pages 2858-2860
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Pressure-induced Γ-X crossover in the conduction band of ordered and disordered GaInP alloys
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND STRUCTURE;
BRILLOUIN SCATTERING;
CALCULATIONS;
ELECTRONS;
ENERGY GAP;
EPITAXIAL GROWTH;
GALLIUM ALLOYS;
LASER BEAMS;
PHOTOLUMINESCENCE;
PHOTONS;
PRESSURE EFFECTS;
SPECTRUM ANALYSIS;
BRILLOUIN ZONE CENTER;
CONDUCTION BAND;
CROSSOVER PRESSURE;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0028423376
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.111449 Document Type: Article |
Times cited : (22)
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References (20)
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