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Volumn 33, Issue 4, 1994, Pages L500-L502

Sharp optical emission from cuinse2 thin films grown by molecular beam epitaxy

(8) Niki, Shigeru a Makita, Yunosuke a Yamada, Akimasa a Obara, Akira a Misawa, Syunji b Igarashi, Osamu a Aoki, Kazuhiro c Kutsuwada, Noboru c

a ELECTROTECHNICAL LABORATORY (Japan)

b ULVAC INC (Japan)

c NIPPON INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Chalcopyrite semiconductor; Intrinsic defects; Molecular beam epitaxy; Photoluminescence

Indexed keywords

COPPER COMPOUNDS; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; MICROANALYSIS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

BANDEDGE EMISSION; CHALCOPYRITES; EMISSION LINES; RADIATIVE RECOMBINATION; SEMICONDUCTING COPPER INDIUM DISELENIDE;

SEMICONDUCTING FILMS;

EID: 0028421076 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.33.L500 Document Type: Article

Times cited : (22)

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