Real-time spectroscopic ellipsometry studies of diamond film growth by microwave plasma-enhanced chemical vapour deposition

Diamond and Related Materials

Volumn 3, Issue 4-6, 1994, Pages 431-437

  Hong, Byungyou ^a   Wakagi, M ^a   Collins, R W ^a   An, Ilsin ^a   Engdahl, N C ^a   Drawl, W ^a   Messier, R ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COALESCENCE; CRYSTALLINE MATERIALS; ELECTRON ENERGY LEVELS; ELLIPSOMETRY; FILM GROWTH; GRAIN BOUNDARIES; LIGHT ABSORPTION; SILICON; SPECTROSCOPY; SUBSTRATES; SURFACE PROPERTIES;

DIAMOND FILMS; MICROWAVE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REAL TIME SPECTROSCOPIC ELLIPSOMETRY;

SYNTHETIC DIAMONDS;

EID: 0028419961     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-9635(94)90198-8     Document Type: Article

References (13)

1. Vapor-Phase-Deposited Diamond-Problems and Potential