Plasma-enhanced chemical vapour deposition of amorphous silicon nitride for thin film diode active matrix liquid crystal displays

Thin Solid Films

Volumn 241, Issue 1-2, 1994, Pages 287-290

  Oversluizen, G ^a   Lodders, W H M ^a   French, I D ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; LIQUID CRYSTAL DISPLAYS; PLASMA SPRAYING; SILICON NITRIDE; THIN FILMS;

LAYER THICKNESS CONTROL; SILICON FILMS; THIN SOLID FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0028419479     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(94)90443-X     Document Type: Article

References (18)

1. Japan Display
2. SID Digest
3. A unified relationship among the opto-electric properties of a-Si:H and approaches for further improvement
4. The mechanism of plasma-induced deposition of amorphous silicon from silane
5. Atomic microstructure and electronic properties of a-SiNx:H deposited by PECVD
6. High stability metal / a-SiN0.5:H / metal diode for LCD application