메뉴 건너뛰기




Volumn 30, Issue 9, 1994, Pages 698-699

Engineering of barrier band structure for electroabsorption MOW modulators

Author keywords

Band structure; Electroabsorption modulators; Semiconductor quantum wells

Indexed keywords

CHARGE CARRIERS; LIGHT ABSORPTION; LIGHT MODULATORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

EID: 0028419040     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19940509     Document Type: Article
Times cited : (12)

References (5)
  • 1
    • 0026243083 scopus 로고
    • Quantum well carrier sweep out: relation to electroabsorption and exciton saturation
    • FOX, A.M., MILLER, D.A.B., LIVESCU, G., CUNNINGHAM, J.E., and JAN, W.Y.: ‘Quantum well carrier sweep out: relation to electroabsorption and exciton saturation’, IEEE J. Quantum Electron., 1991, QE-27, (10), pp. 2281–2295
    • (1991) IEEE J. Quantum Electron. , vol.QE-27 , Issue.10 , pp. 2281-2295
    • FOX, A.M.1    MILLER, D.A.B.2    LIVESCU, G.3    CUNNINGHAM, J.E.4    JAN, W.Y.5
  • 2
    • 36449005822 scopus 로고
    • Enhanced exciton absorption and saturation limit in strained InGaAs/InP quantum wells
    • JIANG, Y., TEICH, M.C. and WANG, W.I.: ‘Enhanced exciton absorption and saturation limit in strained InGaAs/InP quantum wells’, J. Appl. Phys., 1992, 71, (2), pp. 769–772
    • (1992) J. Appl. Phys. , vol.71 , Issue.2 , pp. 769-772
    • JIANG, Y.1    TEICH, M.C.2    WANG, W.I.3
  • 3
    • 0027580801 scopus 로고
    • Direct comparison of InGaAs/InGaAlAs and InGaAs/InGaAsP quantum well modulators
    • HAWDON, B.J., TUTKEN, T., HANGLEITER, A., GLEW, R.W., and WHITEWAY, J.E.A.: ‘Direct comparison of InGaAs/InGaAlAs and InGaAs/InGaAsP quantum well modulators’. Electron. Lett., 1993, 29, (8), pp. 705–706
    • (1993) Electron. Lett. , vol.29 , Issue.8 , pp. 705-706
    • HAWDON, B.J.1    TUTKEN, T.2    HANGLEITER, A.3    GLEW, R.W.4    WHITEWAY, J.E.A.5
  • 4
    • 0027615004 scopus 로고
    • Strained InGaAsP MQW electroabsorption modulator integrated DFB laser
    • SATO, K., KOTAKA, I., WAKITA, K., KONDO, Y., and YAMAMOTO, M.: ‘Strained InGaAsP MQW electroabsorption modulator integrated DFB laser’. Electron. Lett., 1993, 29, (12), pp. 1087–1088
    • (1993) Electron. Lett. , vol.29 , Issue.12 , pp. 1087-1088
    • SATO, K.1    KOTAKA, I.2    WAKITA, K.3    KONDO, Y.4    YAMAMOTO, M.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.