Circuit-Level Electrothermal Simulation of Electrical Overstress Failures in Advanced MOS I/O Protection Devices

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 13, Issue 4, 1994, Pages 482-493

  Diaz, Carlos H ^a   Kang, Sung Mo ^b   Duvvury, Charvaka ^c  

^a HEWLETT PACKARD COMPANY   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC DISCHARGES; ELECTROSTATICS; OVERCURRENT PROTECTION; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS; THERMAL STRESS;

ADVANCED MOS I/O PROTECTION DEVICES; CIRCUIT LEVEL ELECTROTHERMAL SIMULATION; ELECTRICAL OVERSTRESS FAILURES;

MOS DEVICES;

EID: 0028412898     PISSN: 02780070     EISSN: 19374151     Source Type: Journal    
DOI: 10.1109/43.275358     Document Type: Article

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