Growth of 100 GHz SiGe-Heterobipolar Transistor (HBT) Structures

Japanese Journal of Applied Physics

Volumn 33, Issue 4S, 1994, Pages 2415-

  Kasper, Erich ^a   Kibbel, Horst ^a   Herzog, Hans Joest Herzog ^a   Gruhle, Andreas ^a  

^a DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; BORON; ELECTRON TUNNELING; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; X RAY ANALYSIS;

EMMITER BASE JUNCTION; HETEROSTRUCTURE; PINCH RESISTIVITY; PUNCHTHROUGH; SECONDARY ION MASS SPECTROMETRY; SILICON GERMANIDE; TRANSIT FREQUENCY; X RAY DIFFRACTION;

BIPOLAR TRANSISTORS;

EID: 0028404792     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.33.2415     Document Type: Article

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