SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 240, Issue 1-2, 1994, Pages 143-146

Memory switching in amorphous GeSeTl chalcogenide semiconductor films

(5) Kotkata, M F a Afifi, M A a Labib, H H a Hegab, N A a Abdel Aziz, M M a

a Ain Shams University (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; MATHEMATICAL MODELS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING GLASS; SEMICONDUCTING SELENIUM COMPOUNDS; SWITCHING; THALLIUM COMPOUNDS; THERMAL EFFECTS; THIN FILMS;

ACTIVATION ENERGY; CHALCOGENIDE SEMICONDUCTORS; ELECTROTHERMAL BREAKDOWN MODEL; MEMORY SWITCHING;

SEMICONDUCTING FILMS;

EID: 0028401544 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/0040-6090(94)90711-0 Document Type: Article

Times cited : (33)

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