Low-Threshold Continuous-Wave Surface Emitting Lasers with Etched Void Confinement

IEEE Photonics Technology Letters

Volumn 6, Issue 3, 1994, Pages 320-322

  Hansing, C C ^a   Deng, H ^a   Huffaker, D L ^a   Deppe, D G ^a   Streetman, B G ^a   Sarathy, J ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; ETCHING; HETEROJUNCTIONS; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS;

ETCHED VOID CONFINEMENT; LOW THRESHOLD CONTINUOUS WAVE SURFACE EMITTING LASERS; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0028396201     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.275477     Document Type: Article

References (5)

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2. R. S. Geels and L. A. Coldren, “Submilliamp threshold vertical-cavity laser diodes,” Appl. Phys. Lett., vol. 57, p. 1605, 1990.
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4. C. Lei, T. J. Rogers, D. G. Deppe and B. G. Streetman, “In GaAs-GaAs quantum well vertical-cavity surface-emitting laser using molecular beam epitaxial regrowth,” Appl. Phys. Lett., vol. 58, p. 1122, 1991.
5. T. J. Rogers, C. Lei, D. G. Deppe and B. G. Streetman, “Low threshold voltage CW vertical-cavity surface-emitting lasers,” Appl. Phys. Lett., vol. 62, p. 2027, 1993.