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Infrared Physics and Technology

Volumn 35, Issue 2-3, 1994, Pages 451-462

Nanostructure GaAS Schottky diodes for far-infrared heterodyne receivers

(4) Roser H P a Hubers H W a Crowe, T W b Peatman, W C B b

a MAX PLANCK INSTITUT FÜR RADIOASTRONOMIE (Germany)

b UNIVERSITY OF VIRGINIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS; ELECTRIC CURRENTS; ELECTRIC LOSSES; FREQUENCY STANDARDS; MIXER CIRCUITS; OSCILLATORS (ELECTRONIC); SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SIGNAL RECEIVERS; SPURIOUS SIGNAL NOISE;

BIAS CURRENT; CONVERSION LOSS; CRYOGENIC COOLING; FAR INFRARED HETERODYNE RECEIVERS; LOCAL OSCILLATOR; MIXER NOISE TEMPERATURE; NANOSTRUCTURE GALLIUM ARSENIDE SCHOTTKY DIODES; SYSTEM NOISE TEMPERATURE; ZERO BIAS CAPACITANCE;

INFRARED DEVICES;

EID: 0028392008 PISSN: 13504495 EISSN: None Source Type: Journal
DOI: 10.1016/1350-4495(94)90102-3 Document Type: Article

Times cited : (41)

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