-
1
-
-
0022671552
-
Hot-carrier generation in submicrometer VLSI environment
-
T. Sakurai, K. Nogami, M. Kakumu, and T. Ilzuka, “Hot-carrier generation in submicrometer VLSI environment,” IEEE J. Solid-State Circuits, vol. SC-21, p. 187, 1986.
-
(1986)
IEEE J. Solid-State Circuits
, vol.SC-21
, pp. 187
-
-
Sakurai, T.1
Nogami, K.2
Kakumu, M.3
Ilzuka, T.4
-
2
-
-
0024170237
-
Circuit aging simulator (CAS)
-
P. M. Lee, M. M. Kuo, K. Seki, P. K. Ko, and C. Hu, “Circuit aging simulator (CAS),” in I EDM Tech. Dig., 1988, p. 134.
-
(1988)
in I EDM Tech. Dig.
, pp. 134
-
-
Lee, P.M.1
Kuo, M.M.2
Seki, K.3
Ko, P.K.4
Hu, C.5
-
3
-
-
0023545032
-
Circuit hot electron effect simulation
-
S. Aur, D. E. Hocevar, and P. Yang, “Circuit hot electron effect simulation,” in IEDM Tech. Dig., 1987, p. 498.
-
(1987)
in IEDM Tech. Dig.
, pp. 498
-
-
Aur, S.1
Hocevar, D.E.2
Yang, P.3
-
4
-
-
5544324890
-
RELY: A reliability simulator for VLSI circuits
-
W. J. Hsu, C. C. Shih, and B. J. Sheu, “RELY: A reliability simulator for VLSI circuits,” in Proc. IEEE Custom Integrated Circuits Conf., 1988, p. 27.4.1.
-
(1988)
in Proc. IEEE Custom Integrated Circuits Conf.
, pp. 27
-
-
Hsu, W.J.1
Shih, C.C.2
Sheu, B.J.3
-
5
-
-
84945713471
-
Hot-electron-induced degradation—Model, monitor, and improvement
-
C. Hu, S. C. Tam, F. C. Hsu, P. K. Ko, T. Y. Chan, and K. W. Terrill, “Hot-electron-induced degradation—Model, monitor, and improvement,” IEEE Trans. Electron Devices, vol. ED-23, p. 375, 1985.
-
(1985)
IEEE Trans. Electron Devices
, vol.ED-23
, pp. 375
-
-
Hu, C.1
Tam, S.C.2
Hsu, F.C.3
Ko, P.K.4
Chan, T.Y.5
Terrill, K.W.6
-
6
-
-
0022329870
-
High field effects in MOSFET’s, in IEDM Tech. Dig., 1985, p. 60
-
E. Takeda, Y. Ohji, and H. Hume, “High field effects in MOSFET’s, in IEDM Tech. Dig., 1985, p. 60.
-
(1985)
in IEDM Tech. Dig.
, pp. 60
-
-
Takeda, E.1
Ohji, Y.2
Hume, H.3
-
7
-
-
0024124856
-
Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs
-
P. Heremans, R. Bellens, G. Groeseneken, and H. Maes, “Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs,” IEEE Trans. Electron Devices, vol. 35, p. 2194, 1988.
-
(1988)
IEEE Trans. Electron Devices
, vol.35
, pp. 2194
-
-
Heremans, P.1
Bellens, R.2
Groeseneken, G.3
Maes, H.4
-
8
-
-
0000532107
-
Hot-carrier-induced degradation of metal-oxide-semiconductor field-effect transistor: Oxide charge versus interface traps
-
J. Choi, P. K. Ko, C. Hu, and W. Scott, “Hot-carrier-induced degradation of metal-oxide-semiconductor field-effect transistor: Oxide charge versus interface traps,” J. Appl Phys., vol. 65, p. 354, 1989.
-
(1989)
J. Appl Phys.
, vol.65
, pp. 354
-
-
Choi, J.1
Ko, P.K.2
Hu, C.3
Scott, W.4
-
9
-
-
0026219671
-
A model for ac hot-carrier degradation in n-channel MOSFET’s
-
K. Mistry and B. Doyle, “A model for ac hot-carrier degradation in n-channel MOSFET’s,” IEEE Electron Device Lett., vol. 12, p. 492, 1991.
-
(1991)
IEEE Electron Device Lett.
, vol.12
, pp. 492
-
-
Mistry, K.1
Doyle, B.2
-
10
-
-
0026203342
-
Dynamic degradation in MOSFET’s—Part I: The physical effects
-
M. Brox and W. Weber, “Dynamic degradation in MOSFET’s—Part I: The physical effects,” IEEE Trans. Electron Devices, vol. 38, p. 1852, 1991.
-
(1991)
IEEE Trans. Electron Devices
, vol.38
, pp. 1852
-
-
Brox, M.1
Weber, W.2
-
11
-
-
0026206480
-
Dynamic degradation in MOSFET’s—Part II: Application in the circuit environment
-
W. Weber, M. Brox, T. Kunemund, H. Muhlhoff, and D. S. Landsiedel, “Dynamic degradation in MOSFET’s—Part II: Application in the circuit environment,” IEEE Trans. Electron Devices, vol. 38, p. 1859, 1991.
-
(1991)
IEEE Trans. Electron Devices
, vol.38
, pp. 1859
-
-
Weber, W.1
Brox, M.2
Kunemund, T.3
Muhlhoff, H.4
Landsiedel, D.S.5
-
12
-
-
0027624892
-
Circuit design guidelines for n-channel MOSFET hot-carrier robustness
-
K. R. Mistry, T. F. Fox, R. P. Preston, N. D. Arora, B. S. Doyle, and D. E. Nelson, “Circuit design guidelines for n-channel MOSFET hot-carrier robustness,” IEEE Trans. Electron Devices, vol. 40, p. 1284, 1993.
-
(1993)
IEEE Trans. Electron Devices
, vol.40
, pp. 1284
-
-
Mistry, K.R.1
Fox, T.F.2
Preston, R.P.3
Arora, N.D.4
Doyle, B.S.5
Nelson, D.E.6
-
13
-
-
34250732465
-
Novel self-stressing test structures for realistic high-frequency reliability characterization
-
E. S. Snyder, D. V. Campbell, S. E. Swanson, and D. G. Pierce, “Novel self-stressing test structures for realistic high-frequency reliability characterization,” in Proc. IEEE IRPS, 1992, p. 57.
-
(1992)
in Proc. IEEE IRPS
, pp. 57
-
-
Snyder, E.S.1
Campbell, D.V.2
Swanson, S.E.3
Pierce, D.G.4
-
14
-
-
0342476989
-
A new insight into correlation between DC and AC hot-carrier degradation behavior of MOS devices
-
K. N. Quader, P. K. Ko, and C. Hu, “A new insight into correlation between DC and AC hot-carrier degradation behavior of MOS devices,” in Proc. IEEE VLSI Technol. Symp., 1993, p. 13.
-
(1993)
in Proc. IEEE VLSI Technol. Symp.
, pp. 13
-
-
Quader, K.N.1
Ko, P.K.2
Hu, C.3
-
15
-
-
0026140861
-
AC hot-carrier effects in scaled MOS devices
-
E. Takeda, R. Izawa, K. Umeda, and R. Nagai, “AC hot-carrier effects in scaled MOS devices,” in Proc. IRPS, 1991, p. 118.
-
(1991)
in Proc. IRPS
, pp. 118
-
-
Takeda, E.1
Izawa, R.2
Umeda, K.3
Nagai, R.4
-
16
-
-
84910924706
-
BERT—Berkeley reliability tools
-
Dec.
-
R. Tu et al., “BERT—Berkeley reliability tools,” UCB Memo. UCB/ERLM91/107, Dec. 1991.
-
(1991)
UCB Memo. UCB/ERLM91/107
-
-
Tu, R.1
-
17
-
-
0027678356
-
Berkeley reliability tools—BERT
-
Oct.
-
R. Tu, E. Rosenbaum, W. Chan, C. Li, E. Minami, K. Quader, P. Ko, and C. Hu, “Berkeley reliability tools—BERT,” IEEE Trans. Comput.-Aided Design, Oct. 1993.
-
(1993)
IEEE Trans. Comput.-Aided Design
-
-
Tu, R.1
Rosenbaum, E.2
Chan, W.3
Li, C.4
Minami, E.5
Quader, K.6
Ko, P.7
Hu, C.8
-
18
-
-
0024858746
-
P-MOSFET gate current and device degradation
-
Mar.
-
T.-C. Ong. K. Seki, P. K. Ko, and C. Hu, “P-MOSFET gate current and device degradation,” in Proc. IEEE Rel. Phys. Symp., Mar. 1989, p. 178.
-
(1989)
in Proc. IEEE Rel. Phys. Symp.
, pp. 178
-
-
Ong, T.-C.1
Seki, K.2
Ko, P.K.3
Hu, C.4
-
19
-
-
85069689258
-
Simulation of P- and NMOSFET hot-carrier degradation in CMOS circuits
-
Appl.
-
P. Lee, T. Garfinkel, P. K. Ko, and C. Hu, “Simulation of P- and NMOSFET hot-carrier degradation in CMOS circuits,” in Proc. Int. Symp. VLSI Tech., Syst., Appl., 1991, p. 191.
-
(1991)
in Proc. Int. Symp. VLSI Tech.
, pp. 191
-
-
Lee, P.1
Garfinkel, T.2
Ko, P.K.3
Hu, C.4
-
20
-
-
0024053311
-
Simulation of MOSFET lifetime and ac hot-electron stress
-
M. M. Kuo, K. Seki, P. M. Lee, J. Y. Choi, P. K. Ko, and C. Hu, “Simulation of MOSFET lifetime and ac hot-electron stress,” IEEE Trans. Electron Devices, vol. 35, p. 1004, 1988.
-
(1988)
IEEE Trans. Electron Devices
, vol.35
, pp. 1004
-
-
Kuo, M.M.1
Seki, K.2
Lee, P.M.3
Choi, J.Y.4
Ko, P.K.5
Hu, C.6
-
21
-
-
0027202869
-
AC versus DC hot-carrier degradation in n-channel MOSFET’s, IEEE Trans. Electron Devices, p. 96, 1993
-
K. Mistry and B. Doyle, “AC versus DC hot-carrier degradation in n-channel MOSFET’s, IEEE Trans. Electron Devices, p. 96, 1993.
-
(1993)
, pp. 96
-
-
Mistry, K.1
Doyle, B.2
-
22
-
-
0026817584
-
Comments on ' ‘The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors,’ with reply
-
P. Heremens, R. Bellens, G. Groeseneken, H. E. Maes, B. S. Doyle, K. R. Mistry, M. Bourcerie, C. Bergonzoni, R. Benecchi, A. Bravis, and A. Boudou, “Comments on ' ‘The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors,’ with reply,” IEEE Trans. Electron Devices, vol. 39, p. 458, 1992.
-
(1992)
IEEE Trans. Electron Devices
, vol.39
, pp. 458
-
-
Heremens, P.1
Bellens, R.2
Groeseneken, G.3
Maes, H.E.4
Doyle, B.S.5
Mistry, K.R.6
Bourcerie, M.7
Bergonzoni, C.8
Benecchi, R.9
Bravis, A.10
Boudou, A.11
-
23
-
-
0025254790
-
Relating CMOS inverter lifetime to DC hot-carrier lifetime of NMOSFET’s
-
Jan.
-
P. M. Lee, P. K. Ko, and C. Hu, “Relating CMOS inverter lifetime to DC hot-carrier lifetime of NMOSFET’s,” IEEE Electron Device Lett., vol. 11, p. 39, Jan. 1990.
-
(1990)
IEEE Electron Device Lett.
, vol.11
, pp. 39
-
-
Lee, P.M.1
Ko, P.K.2
Hu, C.3
-
24
-
-
0027556356
-
Parametric macro-modeling of hot-carrier-induced dynamic degradation in MOS VLSI circuits
-
Y. Leblebici, W. Sun, and S. M. Kang, “Parametric macro-modeling of hot-carrier-induced dynamic degradation in MOS VLSI circuits,” IEEE Trans. Electron Devices, vol. 40, p. 673, 1993.
-
(1993)
IEEE Trans. Electron Devices
, vol.40
, pp. 673
-
-
Leblebici, Y.1
Sun, W.2
Kang, S.M.3
-
25
-
-
0026899077
-
Hot-carrier stress damage in the gate off state in n-channel transistors
-
B. S. Doyle and K. R. Mistry, “Hot-carrier stress damage in the gate off state in n-channel transistors,” IEEE Trans. Electron Devices, vol. 39, p. 1772, 1992.
-
(1992)
IEEE Trans. Electron Devices
, vol.39
, pp. 1772
-
-
Doyle, B.S.1
Mistry, K.R.2
-
26
-
-
84943130418
-
-
Univ. California, Berkeley
-
1992 EECS/ERL Res. Summary, Univ. California, Berkeley, pp. 179-180.
-
(1992)
1992 EECS/ERL Res. Summary
, pp. 179-180
-
-
-
27
-
-
0026821710
-
New hotcarrier degradation mode and lifetime prediction method for quartermicrometer PMOSFET
-
T. Tsuchiya, Y. Okazaki, M. Miyake, and T. Kobayashi, “New hotcarrier degradation mode and lifetime prediction method for quartermicrometer PMOSFET,” IEEE Trans. Electron Devices, vol. 39, p. 404, 1992.
-
(1992)
IEEE Trans. Electron Devices
, vol.39
, pp. 404
-
-
Tsuchiya, T.1
Okazaki, Y.2
Miyake, M.3
Kobayashi, T.4
-
28
-
-
0026155539
-
Explanation and model for logarithmic time dependence of p-MOSFET degradation
-
Q. Wang, M. Brox, W. H. Krautschneider, and W. Weber, “Explanation and model for logarithmic time dependence of p-MOSFET degradation,” IEEE Electron Device Lett., vol. 12, p. 218, 1991.
-
(1991)
IEEE Electron Device Lett.
, vol.12
, pp. 218
-
-
Wang, Q.1
Brox, M.2
Krautschneider, W.H.3
Weber, W.4
-
29
-
-
84944376932
-
A new bi-directional PMOSFET hot-carrier degradation model for circuit reliability simulation
-
C. C. Li, K. N. Quader, E. R. Minami, P. K. Ko, and C. Hu, “A new bi-directional PMOSFET hot-carrier degradation model for circuit reliability simulation,” in IEDM Tech. Dig., 1992, p. 547.
-
(1992)
in IEDM Tech. Dig.
, pp. 547
-
-
Li, C.C.1
Quader, K.N.2
Minami, E.R.3
Ko, P.K.4
Hu, C.5
-
31
-
-
85027100650
-
Prediction of hotcarrier degradation in digital CMOS VLSI by timing simulation
-
E. Minami, K. N. Quader, P. K. Ko, and C. Hu, “Prediction of hotcarrier degradation in digital CMOS VLSI by timing simulation,” in IEDM Tech. Dig., 1992, p. 531.
-
(1992)
in IEDM Tech. Dig.
, pp. 531
-
-
Minami, E.1
Quader, K.N.2
Ko, P.K.3
Hu, C.4
-
32
-
-
0023562281
-
VLSI circuit reliability under AC hot-carrier stress
-
K. Nogami, K. Sawada, M. Kinugawa, and T. Sakurai, “VLSI circuit reliability under AC hot-carrier stress,” in Proc. Symp. VLSI Circuits, 1987, p. 13.
-
(1987)
in Proc. Symp. VLSI Circuits
, pp. 13
-
-
Nogami, K.1
Sawada, K.2
Kinugawa, M.3
Sakurai, T.4
-
33
-
-
0025518955
-
Hot-carrier degradation in n-MOSFET’s used as pass transistor
-
K. Mistry and B. Doyle, “Hot-carrier degradation in n-MOSFET’s used as pass transistor,” IEEE Trans. Electron Devices, vol. 37, p. 2415, 1990.
-
(1990)
IEEE Trans. Electron Devices
, vol.37
, pp. 2415
-
-
Mistry, K.1
Doyle, B.2
-
34
-
-
84954155580
-
A new approach for simulating circuit degradation due to hot-carrier effects in NMOSFETs
-
K. N. Quader, C. Li, R. Tu, E. Rosenbaum, P. K. Ko, and C. Hu, “A new approach for simulating circuit degradation due to hot-carrier effects in NMOSFETs,” in IEDM Tech. Dig., 1991, p. 337.
-
(1991)
in IEDM Tech. Dig.
, pp. 337
-
-
Quader, K.N.1
Li, C.2
Tu, R.3
Rosenbaum, E.4
Ko, P.K.5
Hu, C.6
|