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Applied Physics Letters

Volumn 64, Issue 12, 1994, Pages 1481-1483

Structural origin of the 5.16 eV optical absorption band in silica and Ge-doped silica

(4) Tsai, T E a Friebele, E J a Rajaram, M b Mukhapadhyay, S b

a NAVAL RESEARCH LABORATORY (United States)

b GENERAL ELECTRIC COMPANY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; GERMANIUM COMPOUNDS; HIGH TEMPERATURE OPERATIONS; HYDROGEN; IMPURITIES; LIGHT ABSORPTION; MAGNETIC RESONANCE MEASUREMENT; OPTICAL VARIABLES MEASUREMENT; PARAMAGNETIC RESONANCE; SILICA; SPECTROMETERS; THERMAL EFFECTS;

DIVACANCY; HIGH TEMPERATURE BAKING; OXYGEN DEFICIENCY CENTER;

BAND STRUCTURE;

EID: 0028387898 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.111891 Document Type: Article

Times cited : (34)

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