Optical and electrical properties of titanium dioxide films with a high magnitude dielectric constant grown on p-Si by metalorganic chemical vapor deposition at low temperature

Applied Physics Letters

Volumn 64, Issue 11, 1994, Pages 1407-1409

  Kim, T W ^a   Jung, M ^a   Kim, H J ^a   Park, T H ^a   Yoon, Y S ^b   Kang, W N ^b   Yom, S S ^b   Na, H K ^c  

^a Kwangwoon University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; DIELECTRIC PROPERTIES; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; LOW TEMPERATURE OPERATIONS; MORPHOLOGY; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; TITANIUM DIOXIDE; X RAY ANALYSIS;

DIELECTRIC CONSTANT; MICROCRACKS; STOICHIOMETRY; X RAY DIFFRACTION;

THIN FILMS;

EID: 0028387893     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.111898     Document Type: Article

References (24)