140GHz indium phosphide Gunn diode

Electronics Letters

Volumn 30, Issue 6, 1994, Pages 499-500

  Hang, C ^a   Crowley, J D ^a   Dalrymple, R E ^a   Tringali, D R ^a   Fank, F B ^a   Wandinger, L ^b   Wallace, H B ^c  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b U S ARMY   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Gunn diodes; Indium phosphide

Indexed keywords

MICROWAVE GENERATION; MICROWAVE OSCILLATORS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DIODES;

GUNN OSCILLATORS; INP SUBSTRATES; MICROWAVE GUIDES;

GUNN DIODES;

EID: 0028387430     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19940358     Document Type: Article

References (4)

1. RIDLEY, B.K.: ‘Anatomy of the transferred-electron effect in III-V semiconductors’, J. Appl. Phys., February 1977, 48, (2), pp. 754–764
2. FRISCOURT, M.R., ROLLAND, P.A., CAPPY, A., CONSTANT, E., and SALMER, G.: ‘Theoretical contribution to the design of millimetre-wave TEO's’, IEEE Trans., 1983, ED-30, (3), pp. 223–229
3. CROWLEY, J.D., SOWERS, J.J., JANIS, B.A., and FANK, F.B.: ‘High efficiency 90 GHz InP Gunn oscillators’. Electron. Lett., 1980, 16, (18), pp. 705–706
4. DI FORTE-POISSON, M.A., BRYLKINSKl, C., and COLMER, G.: ‘High power, high efficiency LP-MOCVD InP Gunn diodes for 94 GHz’, Electron. Lett., 1984, 20, (25), pp. 1061–1062