High-power singlemode AlGaAs distributed Bragg reflector laser diodes operating at 856nm

Electronics Letters

Volumn 30, Issue 6, 1994, Pages 496-497

  Major, J S ^a   O'Brien, S ^a   Gulgazov, V ^a   Welch, D F ^a   Lang, R J ^a  

^a Spectra Diode Labs Inc   (United States)

Author keywords

Distributed Bragg reflector lasers; Lasers

Indexed keywords

EPITAXIAL GROWTH; LASER MODES;

BRAGG REFLECTORS; HETEROSTRUCTURES; LASER DIODES;

SEMICONDUCTOR LASERS;

EID: 0028384120     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19940350     Document Type: Article

References (5)

1. CHEN, T.R., ENG, L.E., ZHUANG, Y.H., XU, Y.J., ZAREM, H., and YARIV, A.: ‘High-power operation of buried-heterostructure strained-layer InGaAs/GaAs single quantum well lasers’, Appl. Phys. Lett., 1990, 57, pp. 2762–2764
2. MAJOR, J.S., Jr., PLANO, W.E., WELCH, D.F., and SCIFRES, D.: ‘Single-mode InGaAs-GaAs laser diodes operating at 980nm’, Electron. Lett., 1991, 27, pp. 539–541
3. O'BRIEN, S., PARKE, R., WELCH, D.F., MEHUYS, D., and SCIFRES, D.: ‘High power singlemode GaInAs lasers with distributed Bragg reflectors’, Electron. Lett., 1992, 28, pp. 1272–1273
4. SIN, Y.K., and HORIKAWA, H.: ‘High power 0.98 µm InGaAs-GaAs-InGaP distributed feedback buried heterostructure strained quantum well lasers’. Electron. Lett., 1993, 29, pp. 920–922
5. MAJOR, J.S., and WELCH, D.F.; ‘Single-mode InGaAs/AlGaAs distributed Bragg reflector laser diodes operating at 1083nm’, Electron. Lett., 1993, 29, pp. 2121–2122