Temperature dependence of 2μm strained-quantum-well InGaAs/InGaAsP/InP diode lasers

Electronics Letters

Volumn 30, Issue 4, 1994, Pages 324-326

  Martinelli, R U ^a   Menna, R J ^a   Triano, A ^a   Harvey, M G ^a   Olsen, G H ^b  

^a SARNOFF CORPORATION   (United States)

^b GOODRICH CORPORATION   (United States)

Author keywords

Lasers; Semiconductor lasers

Indexed keywords

QUANTUM THEORY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; STRAIN; THERMAL EFFECTS;

CONTINUOUS WAVE; EXTERNAL QUANTUM EFFICIENCY; STRAINED MULTIQUANTUM WELL LASER; TEMPERATURE DEPENDENCE;

SEMICONDUCTOR LASERS;

EID: 0028380648     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19940222     Document Type: Article

References (11)

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8. The epitaxial growth was performed by Epitaxial Products International, Ltd., Cypress Drive, St. Mellons., Cardiff, UK CF3 OEG
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