InSb films for magnetic sensors

Sensors and Actuators: A. Physical

Volumn 40, Issue 2, 1994, Pages 131-134

  Ohshita, Masahide ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRIC PROPERTIES; EVAPORATION; FILM PREPARATION; MAGNETIC DEVICES; MAGNETOELECTRIC EFFECTS; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; X RAY ANALYSIS;

HALL ELEMENTS; HOT WIRE RECRYSTALLIZATION METHOD; MAGNETIC SENSORS; MAGNETORESISTANCE (MR) ELEMENTS; SEQUENTIAL DEPOSITION; SOURCE TEMPERATURE PROGRAMMED EVAPORATION METHOD;

SENSORS;

EID: 0028380330     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/0924-4247(94)85018-6     Document Type: Article

References (6)

1. Preparation of high mobility InSb films
2. Single crystal InSb thin films by electron beam re-crystallization
3. Effect of random inhomogeneities on electrical and galvanometric measurements
4. Influence of conductivity gradients on galvanometric effects in semiconductors
5. Sensing characteristics and crystalline structure of InSb films for magnetic sensors
6. Crystal growth investigation of the magnetically highly sensitive InSb evaporated films