Radiation tolerance of single-sided silicon microstrips

Nuclear Inst. and Methods in Physics Research, A

Volumn 339, Issue 3, 1994, Pages 511-523

  Holmes Siedle, A ^a   Robbins, M ^a   Watts, S ^a   Allport, P ^b   Brenner, R ^c   Moser, H G ^c   Roe, S ^c   Straver, J ^c   Weilhammer, P ^c   Chochula, P ^d   Mikulec, I ^d   Moszczynski, S ^e   Turala, M ^e   Dabrowski, W ^f   Grybos, P ^f   Idzik, M ^f   Loukas, D ^g   Misiakos, K ^g   Siotis, I ^g   Zachariadou, K ^g   Dulinski, W ^h   Michele, J ^h   Schaeffer, M ^h   Turchetta, R ^h   Booth, P ⁱ   Richardson, J ⁱ   Smith, N ⁱ   Gill, K ^j   Hall, G ^j   Sachdeva, R ^j   Sotthibandhu, S ^j   Vite D ^j   Wheadon, R ^j   Arrighi, C ^k   Delpierre, P ^k   Habrard, M C ^k   Clemens, J C ^k   Mouthuy, T ^k   Avset, B S ^l   Evensen, L ^m   Hanneborg, A ^m   Hansen, T A ^m   Bisello, D ⁿ   Giraldo, A ⁿ   Paccagnella, A ⁿ   Kurchaninov, L ^o   Spiriti, E ^o   Apsimon, R ^p   Giubellino, P ^q   Ramello, L ^q   Prado da Silva, W L ^q   Krammer, M ^r   Schuster, M ^r   more..

^a BRUNEL UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c CERN   (Switzerland)

^d Physics and Informatics   (Slovakia)

^e INSTITUTE OF NUCLEAR PHYSICS   (Poland)

^f Faculty of Physics and Nuclear Techniques   (Poland)

^g INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^h LEPSI   (France)

ⁱ UNIVERSITY OF LIVERPOOL   (United Kingdom)

^j IMPERIAL COLLEGE LONDON   (United Kingdom)

^k AIX MARSEILLE UNIVERSITÉ   (France)

^l UNIVERSITY OF OSLO   (Norway)

^m Senter for Industriforskning   (Norway)

ⁿ SEZIONE DI PADOVA   (Italy)

^o INFN SEZIONE DI ROMA   (Italy)

^p RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^q SEZIONE DI TORINO   (Italy)

^r IHEP Vienna   (Austria)

more..

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COLLIDING BEAM ACCELERATORS; DOPING (ADDITIVES); NEUTRON IRRADIATION APPARATUS; RADIATION DETECTORS;

FLUENCES; RADIATION TOLERANCE; SILICON MICROSTRIPS;

MICROSTRIP DEVICES;

EID: 0028379831     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(94)90188-0     Document Type: Article

References (24)

1. New structures for position sensitive semiconductor detectors
2. The OPAL silicon microvertex detector
3. Fast neutron damage in silicon detectors
4. Type inversion in silicon detectors
5. A multipurpose experimental irradiation plant