Dielectric relaxation of paired defects in perovskite-type oxides

Materials Science and Engineering B

Volumn 23, Issue 1, 1994, Pages 19-24

  Nowick, A S ^a   Fu, S Q ^a   Lee, W K ^a   Lim, B S ^a   Scherban, T ^a  

^a Och Spine at New York Presbyterian Hospitals   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CRYSTAL DEFECTS; DIELECTRIC RELAXATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; IRON COMPOUNDS; PARAMAGNETIC RESONANCE;

ACTIVATION ENERGY; CALCIUM TITANIUM OXIDE; PAIRED DEFECTS; POTASSIUM TANTALUM OXIDE;

PEROVSKITE;

EID: 0028378445     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(94)90272-0     Document Type: Article

References (27)

1. The correlation of hydrogen diffusion with the relative concentrations of cubic and axial Fe3+ sites in KTaO3 a)
2. Protonic conduction in acceptor-doped KTaO3 crystals
3. Paraelectric phenomena
4. Dielectric and anelastic relaxation of crystals containing point defects. II
5. Some Transport Properties of Oxygen-Deficient Single-Crystal Potassium Tantalate (KTaO3)
6. The calculation of dipole moments associated with defects in ionic crystals
7. Frequency-dependent loss in amorphous semiconductors