Analytical SiGe-base HBT model and its effects on a BiCMOS inverter circuit

IEEE Transactions on Electron Devices

Volumn 41, Issue 2, 1994, Pages 272-276

  Lu, T C ^a   Kuo, J B ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ELECTRIC INVERTERS; EMITTER COUPLED LOGIC CIRCUITS; GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

BICMOS INVERTER CIRCUITS; FORWARD TRANSIT TIME; GERMANIUM CONCENTRATION; HETEROJUNCTION BIPOLAR TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 0028377865     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.277366     Document Type: Article

References (12)

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