Epitaxial Growth of SiC on Sapphire Substrates with an AIN Buffer Layer

Journal of the Electrochemical Society

Volumn 141, Issue 2, 1994, Pages 510-513

  Sywe, B S ^a   Yu, Z J ^a   Burckhard, S ^a   Edgar, J H ^a   Chaudhuri, J ^b  

^a KANSAS STATE UNIVERSITY   (United States)

^b WICHITA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; DISLOCATIONS (CRYSTALS); ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; NITRIDES; SAPPHIRE; SEMICONDUCTOR MATERIALS; STRAIN;

ALUMINUM NITRIDE; BUFFER LAYER; CHANNELING PATTERNS; DISLOCATION DENSITY; NUCLEATION;

SILICON CARBIDE;

EID: 0028374523     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2054756     Document Type: Article

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