Coupled-quantum-well field-effect resonant tunneling transistor for multi-valued logic/memory applications

IEEE Transactions on Electron Devices

Volumn 41, Issue 2, 1994, Pages 132-137

  Mikkelson, Chad H ^a   Seabaugh, Alan C ^a   Beam III, Edward A ^a   Luscombe, James H ^a   Frazier, Gary A ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON TUNNELING; GATES (TRANSISTOR); LOGIC CIRCUITS; MANY VALUED LOGICS; RESONANT CIRCUITS; SCHEMATIC DIAGRAMS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR STORAGE;

COUPLED QUANTUM WELL FIELD EFFECT RESONANT TUNNELING TRANSISTOR; MULTIVALUED LOGIC/MEMORY FUNCTIONS; SIDE GATES;

FIELD EFFECT TRANSISTORS;

EID: 0028374429     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.277388     Document Type: Article

References (20)

1. M. Tsuchiya H. Sakaki Precise control of resonant tunneling current in AlAs/GaAs/AlAs double barrier diodes with atomically-controlled barrier widths Jpn. J. Appl. Phys. 25 3 L185 L187 1986
2. Y. C. Kao A. C. Seabaugh H. T. Yuan Vertical integration of structured resonant tunneling diodes on InP for multi-valued memory applications Proc. InP and Rel. Mat. Conf. 489 492 Proc. InP and Rel. Mat. Conf. 1992
3. T. Nakagawa H. Imamoto T. Kojima K. Ohta Observation of resonant tunneling in AlGaAs/GaAs triple barrier diodes Appl. Phys. Lett. 49 2 73 75 1986
4. T. Nakagawa T. Fujita Y. Matsumoto T. Kojima K. Ohta Sharp resonance characteristics in triple-barrier diodes with a thin undoped spacer layer Jpn. J. Appl. Phys. 26 6 L980 L982 1987
5. D. A. Collins D. H. Chow D. Z.-Y. Ting E. T. Yu J. R. Söderstrom T. C. McGill Large peak-to-valley current ratio in triple barrier heterostructures Solid-State Electronics 32 12 1095 1099 1989
6. M. Tewordt I.. Asahi V. J. Law R. T. Syme M. J. Kelly D. A. Ritchie A. Churchill J. E. F. Frost R. H. Hughes G. A. C. Jones Resonant tunneling in coupled quantum dots Appl. Phys. Lett. 60 5 595 597 1992
7. T. P. E. Broekaert W. Lee C. G. Fonstad Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with peak-to-valley current ratios of 30 at room temperature Appl. Phys. Lett. 53 16 1545 1547 1988
8. E. A. Beam T. S. Henderson Α. C. Seabaugh J. V. Yang The use of tertiarybutylphosphine and tertiarybutylarsine for metalorganic molecular beam epitaxy of the In0.53Ga0.47 As/InP and In0.48Ga0.52P/GaAs materials systems J. Crys. Growth 116 436 446 1991
9. J. H. Luscombe Current issues in nanoelectronic modeling Νanotechnology 4 10 20 1993
10. J. F. Young Β. M. Wood H. C. Liu M. Buchanan D. Landheer A. J. Springthorpe P. Mandeville Effect of circuit oscillations on the dc current-voltage characteristics of double barrier resonant tunneling structures Appl. Phys. Lett. 52 17 1398 1400 1988
11. S. Adachi Materials parameters of In1-xGaxAsyP1-y and related binaries J. Appl. Phys. 53 12 8775 8792 1982
12. A. C. Seabaugh J. I.. Luscombe J. N. Randall Quantum functional devices: present status and future prospects Future Electron Devices J. 3 Suppl. 1 9 20 1993
13. W. L. Chen K. W. Eisenbeiser J. R. East G. I. Haddad Ohmic contact study for quantum effect transistors and heterojunction bipolar transistors with InGaAs contact layers J. Vac. Sci. Technol. B 10 6 2354 2360 1992
14. L. Micheel Heterojunction bipolar technology for emitter-coupled multiple-valued logic in gigahertz, adders and multipliers Ρroc. 22nd Int. Sym. Multiple-Valued Logic Ρroc. 22nd Int. Sym. Multiple-Valued Logic 1992
15. S.-J. Wei H. C. Lin Multivalued SRAM cell using resonant tunneling diodes IEEE J. Solid-State Circ. 27 2 212 216 1992
16. Ζ. X. Yan M. J. Deen A new resonant-tunnel diode-based multivalued memory circuit using a MESFET depletion load IEEE J. Solid-State Cir. 27 8 1198 1202 1992
17. A. C. Seabaugh Y.-C. Kao H.-T. Yuan Nine-state resonant tunneling diode memory IEEE Electron Dev. Lett. 13 9 479 481 1992
18. K. F. Longenbach Y. Wang W. I. Wang Two-dimensional electron gas modulated resonant tunneling transistor Appl. Phys. Lett. 59 8 967 969 1991
19. R. C. Potter A. Lakhani H. Hier Three and six logic states by the vertical integration of InAlAs/InGaAs resonant tunneling structures J. Appl. Phys. 64 7 3735 3736 1988
20. T. Tanoue H. Mizuta S. Takahashi A triple-well resonant tunneling diode for multiple-valued logic application IEEE Electron Dev. Lett. 9 365 367 1988