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Surface and Interface Analysis

Volumn 21, Issue 2, 1994, Pages 155-159

X‐ray induced AES study of the effect of chemically bound hydrogen on the oxidation kinetics of an Si3N4 powder

(4) Wang, Pu Sen a Malghan, Subhas G a Hsu, Stephen M a Wittberg, Thomas N b

a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

b UNIVERSITY OF DAYTON RESEARCH INSTITUTE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; KINETIC THEORY; OXIDATION; SILICON NITRIDE;

CHEMICALLY BONDED HYDROGEN; HYDROGEN IMPURITY; OXIDATION KINETICS; POWDER PARTICLE SURFACES; VACUUM ANNEALING;

AUGER ELECTRON SPECTROSCOPY;

EID: 0028370986 PISSN: 01422421 EISSN: 10969918 Source Type: Journal
DOI: 10.1002/sia.740210215 Document Type: Article

Times cited : (11)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.