Significance of charge sharing in causing threshold voltage roll-off in highly doped 0.1-μm si metal oxide semiconductor field effect transistors and its suppression by atomic layer doping

Japanese Journal of Applied Physics

Volumn 33, Issue 1, 1994, Pages 599-605

  Noda, Hiromasa ^a   Nakamura, Kaori ^a   Kimura, Shin’Ichiro ^a  

^a HITACHI LTD   (Japan)

Author keywords

0.1 m; ALD; Charge sharing; MOSFET; Punchthrough; Short channel effect; Si; Threshold voltage roll off

Indexed keywords

ELECTRIC CHARGE; ELECTRON BEAM LITHOGRAPHY; GATES (TRANSISTOR); ION IMPLANTATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SUBSTRATES;

ATOMIC LAYER DOPING; CHARGE SHARING; PUNCHTHROUGH; SHORT CHANNEL EFFECT; THRESHOLD VOLTAGE ROLL OFF;

MOSFET DEVICES;

EID: 0028338068     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.33.599     Document Type: Article

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