Voltage overshoots and N-MOSFET hot carrier robustness in VLSI circuits

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1994, Pages 65-71

  Mistry, Kaizad R ^a   Hokinson, Ray ^a   Gieseke, Bruce ^a   Fox, Thomas F ^a   Preston, Ronald P ^a   Doyle, Brian S ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC CURRENT DISTRIBUTION; ELECTRIC NETWORK PARAMETERS; FAILURE ANALYSIS; HOT CARRIERS; MICROPROCESSOR CHIPS; STRESSES; VLSI CIRCUITS;

HOT CARRIER ROBUSTNESS; STRESS DATA; TRANSITION TIME DEPENDENCIES; VOLTAGE OVERSHOOTS;

MOSFET DEVICES;

EID: 0028313940     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/relphy.1994.307855     Document Type: Conference Paper

References (13)