Analysis of externally imposed mechanical stress effects on the hot-carrier-induced degradation of MOSFET's

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1994, Pages 29-33

  Degraeve, R ^a   De Wolf, I ^a   Groeseneken, G ^a   Maes, H E ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ELECTRONICS PACKAGING; HOT CARRIERS; INTERFACES (MATERIALS); MECHANICAL TESTING; MICROPROCESSOR CHIPS; PIEZOELECTRICITY; SEMICONDUCTOR DEVICE STRUCTURES; STRESS ANALYSIS; STRESSES;

CARRIER TRAPPING; CHANNEL HOT CARRIER INJECTION; EXTERNALLY IMPOSED MECHANICAL STRESS EFFECTS; HOT CARRIER INDUCED DEGRADATION; SUBSTRATE HOT ELECTRON INJECTION; SUBSTRATE HOT HOLE INJECTION;

MOSFET DEVICES;

EID: 0028294836     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/relphy.1994.307861     Document Type: Conference Paper

References (18)