Bandgap engineering of semiconductor heterostructures by molecular beam epitaxy: physics and applications

Surface Science

Volumn 299-300, Issue C, 1994, Pages 878-891

  Capasso, Federico ^a   Cho, Alfred Y ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; HETEROJUNCTIONS; OPTICAL PROPERTIES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; TUNING;

BANDGAP ENGINEERING; ENERGY DIAGRAMS;

MOLECULAR BEAM EPITAXY;

EID: 0028274358     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(94)90704-8     Document Type: Article

References (66)

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13. Potentials supporting positive-energy eigenstates and their application to semiconductor heterostructures
14. Modification of heterojunction band offsets by thin layers at interfaces: Role of the interface dipole