Close-spaced MOCVD reactor for 1%-uniformity growth of In-containing materials on 4″ substrates

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1994, Pages 137-140

  Vernon, S M ^a   Colter, P C ^a   McNulty, D D ^a   Hogan, S J ^a   Weyburne, D W ^a   Ahern, B S ^a  

^a SPIRE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; COMPOSITION; FILM GROWTH; INTERFACES (MATERIALS); SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMOCOUPLES; THICKNESS MEASUREMENT;

REACTION CHAMBER; STAGNATION POINT MODE; WAFER;

CHEMICAL REACTORS;

EID: 0028272821     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)