Wafer-level pulsed-DC electromigration response at very high frequencies

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1994, Pages 198-206

  Pierce, Donald G ^a   Snyder, Eric S ^a   Swanson, Scot E ^a   Irwin, Lloyd W ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; DIFFUSION; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; FREQUENCY RESPONSE; INTEGRATED CIRCUITS; RELAXATION PROCESSES; RELIABILITY; SEMICONDUCTOR DEVICE TESTING; STATISTICAL TESTS; THERMAL EFFECTS;

DC ELECTROMIGRATION RESPONSE; DUTY FACTOR RESPONSE; ELECTROMIGRATION FREQUENCY RESPONSE MEASUREMENTS; SELF STRESSING TEST STRUCTURES; STANDARD TEST STRUCTURES;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0028264625     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/relphy.1994.307836     Document Type: Conference Paper

References (27)