Hole trapping and detrapping characteristics investigated by substrate hot-hole injection into oxide of metal-oxide-semiconductor structure

Japanese Journal of Applied Physics

Volumn 33, Issue 1, 1994, Pages 668-671

  Mohd Khosru, Quazi Deen ^a   Yasuda, Naoki ^a,b   Taniguchi, Kenji ^a   Hamaguchi, Chihiro ^a  

^a OSAKA UNIVERSITY   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

Hole trap; Oxide field; P channel MOS transistors; Reinjection characteristics; Thin gate oxide; Time dependent effect; Trap charging phenomena

Indexed keywords

ELECTRIC CHARGE; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; SUBSTRATES;

HOT HOLE INJECTION; OXIDE FIELD; P-CHANNEL MOS TRANSISTORS; TRAP CHARGING PHENOMENA;

MOSFET DEVICES;

EID: 0028257776     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.33.668     Document Type: Article

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