Hot-carrier-induced degradation in ultra-thin, fully-depleted, deep-submicron NMOS and PMOS SOI transistors

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1994, Pages 57-64

  Tsuchiya, Toshiaki ^a   Ohno, Terukazu ^a   Kado, Yuichi ^a   Kai, Junko ^a  

^a NTT Advanced Technology Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEGRADATION; GATES (TRANSISTOR); HOT CARRIERS; MOS DEVICES; OXIDES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SURFACES; TRANSISTORS;

HOT CARRIER INDUCED DEGRADATION; ULTRA THIN FULLY DEPLETED DEEP SUBMICRON NMOS SOI TRANSISTORS; ULTRA THIN FULLY DEPLETED DEEP SUBMICRON PMOS SOI TRANSISTORS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0028255853     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/relphy.1994.307856     Document Type: Conference Paper

References (7)