High temperature silicon carbide MOSFETs with very low drain leakage current

Electronics Letters

Volumn 30, Issue 2, 1994, Pages 170-171

  Billon, T ^a   Lassagne, P ^a   Jaussaud, C ^a   Baud, L ^a   Becourt N ^a   Ouisse, T ^b   Morfouli, P ^b   Ponthenier, J L ^c  

^a CEA LETI   (France)

^b CNRS   (France)

^c Merlin gérin DTE ^*  (France)

Author keywords

MOSFETs; Semiconductor devices

Indexed keywords

BAND STRUCTURE; GATES (TRANSISTOR); HIGH TEMPERATURE OPERATIONS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; SUBSTRATES;

DRAIN LEAKAGE CURRENTS; HIGH TEMPERATURE SILICON CARBIDE MOSFETS; INVERSION MODE;

MOSFET DEVICES;

EID: 0028253034     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19940098     Document Type: Article

References (6)

1. DAVIS, R.F., KELNER, G., SHUR, M., PALMOUR, J.W., and EDMOND, J.A.: ‘Thin film deposition and microelectronic and optoelectronic device and fabrication and characterization in monocrystaline alpha and beta carbide’, Proc. IEEE, 1991, 79, pp. 677–701
2. SHIBAHARA, K., SAITO, T., NISHINO, S., and MATSUNAMI, H.: ‘Fabrication of inversion-type n-channel MOSFETs using cubic-SiC on Si (100)’, IEEE Electron. Device Lett., 1986, pp. 692–693
3. PALMOUR, J.W., KONG, H.S., and DAVIS, R.F.: ‘Characterization of device parameters in high temperature metal-oxide-semiconductor field-effect transistors in β-SiC thm films’, J. Appl. Phys., 1988, 64, pp. 2168–2177
4. PALMOUR, J.W., EDMOND, J.A., KONG, H.S., and CARTER, C.H., Jr.: ‘6H-Silicon carbide devices and applications’, Physica B, 1993, 185, pp. 461–465
5. OUISSE, T., BéCOORT, N., TEMPLIER, F., and JAUSSAUD, C.: ‘LoW frequency, high temperature conductance and capacitance measurements on metal-oxide-silicon carbide capacitors’, to be published in J. Appl. Phys.
6. GHIBAUDO, G.: ‘New method for the extraction of MOSFET parameters’. Electron. Lett., 1988, 24, pp. 543–545