Monolayer control of chemical beam etching for regrowth

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1994, Pages 599-602

  Chiu, T H ^a   Tsang, W T ^a   Kapre, R M ^a   Williams, M D ^a   Ferguson, J F ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRON DIFFRACTION; GASES; MONITORING; MORPHOLOGY; PROCESS CONTROL; REAL TIME SYSTEMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SURFACE PROPERTIES; THERMAL EFFECTS;

CATION DIFFUSION; CHEMICAL BEAM ETCHING; GROWTH CHAMBER; GROWTH MODES; MIGRATION ENHANCED SMOOTHING; MONOLAYER CONTROL; REAL TIME MONITORING SYSTEM; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; REGROWTH; ROUGHENING MECHANISM;

ETCHING;

EID: 0028202021     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)