Atomic processes in crystal growth

Surface Science

Volumn 299-300, Issue C, 1994, Pages 798-817

  Venables, John A ^a,b  

^a UNIVERSITY OF SUSSEX   (United Kingdom)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MICROSCOPIC EXAMINATION; REACTION KINETICS; SURFACE PHENOMENA; THERMODYNAMICS; THIN FILMS; VAPOR DEPOSITION;

ISLAND GROWTH; LAYER GROWTH; NUCLEATION;

CRYSTAL GROWTH;

EID: 0028196463     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(94)90698-X     Document Type: Article

References (98)

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28. Phase formation sequence and domain structure: A low-energy-electron-microscopy study of the Si(111)-(√3 × √3 )Ag surface
29. Atomic Processes in Silicon Hetero-Epitaxy