Concise analytical model for deep submicron N-channel metal-oxide-semiconductor devices with consideration of energy transport

Japanese Journal of Applied Physics

Volumn 33, Issue 1, 1994, Pages 550-553

  Ma, Shyh Yih ^a   Kuo, James B ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Carrier temperature; Deep submicron; Energy transport; MOS

Indexed keywords

CHARGE CARRIERS; ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; SEMICONDUCTOR DEVICE MODELS; TEMPERATURE;

DEEP SUBMICRON N CHANNEL MOS DEVICES; ENERGY TRANSPORT;

MOS DEVICES;

EID: 0028195295     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.33.550     Document Type: Article

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