Radiation effects on solid state imaging devices

Radiation Physics and Chemistry

Volumn 43, Issue 1-2, 1994, Pages 79-91

  Hopkinson, G R ^a  

^a Sira Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; IMAGING TECHNIQUES; IONIZATION; SOLID STATE DEVICES; SPACE APPLICATIONS; TRANSIENTS;

DEVICE HARDENING; SEMICONDUCTOR IMAGING ARRAYS;

RADIATION EFFECTS;

ARTICLE; CONTROLLED STUDY; PERFORMANCE; RADIATION EXPOSURE; SEMICONDUCTOR; SPACE FLIGHT;

EID: 0028158955     PISSN: 0969806X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0969-806X(94)90203-8     Document Type: Article

References (89)

1. Results of radiation tests performed on the ISOCAM infrared detector array
2. Interstitial defect reactions in silicon
3. A model for charge transfer in buried channel charge-coupled devices at low temperatures
4. Energy loss and ionization of fast charged particles in a 20 μm silicon detector
5. 2 gate insulators at low temperatures
6. A distribution function for ion track lengths in rectangular volumes
7. Progress with PN-CCDs for the XMM Satellite Mission
8. Dynamic suppression of interface-state dark current in buried channel CCDs
9. Energy Dependence of Proton-Induced Displacement Damage in Silicon
10. Gamma-Induced Noise in CCDs
11. Ultraviolet, visible, and infrared response of PtSi Schottky-barrier detectors operated in the front-illuminated mode
12. Characterisation and modeling of neutron induced transient response changes in Si: As infrared detectors
13. Particle-induced dark current fluctuations in focal plane arrays
14. Particle induced displacement damage in silicon imagers
15. The generation lifetime damage factor and its variance in silicon
16. Methodology for testing IR detectors in simulated nuclear radiation environments
17. Laser induced effects in HgCdTe photovoltaic devices
18. Radiation-hardening technology
19. Charge collection in partially depleted GaAs test structures induced by alphas, heavy ions, and protons
20. Hardness assurance for low-dose space applications
21. Two-dimensional electron gas charge-coupled devices (2DEG-CCD's)
22. Ionisation energy losses of highly relativistic charged particles in thin silicon layers
23. Lateral profiling of interface states along the sidewalls of channel-stop isolation
24. The use of semiconductor imagers in high energy particle physics
25. Cumulated dose long term effects in charge coupled devices
26. Techniques for minimizing space proton damage in scientific charge coupled devices
27. Analytic modeling of charge diffusion in charge-coupled-device imagers
28. Radiation effects on CCDs for spaceborne acquisition and tracking applications
29. Cobalt-60 and proton radiation effects on large format, 2-D, CCD arrays for an earth imaging application
30. Proton damage effects in an EEV CCD imager
31. Radiation damage in scientific charge-coupled devices
32. The effects of proton damage on charge-coupled devices
33. Fano-noise limited CCDs
34. Gamma Radiation Induced Noise in a CCD Imager
35. Nuclear and space radiation effects in infrared detectors
36. Radiation response issues for infrared detectors
37. 2 layer
38. Radiation effects in silicon charge-coupled devices
39. Interstitial Defect Reactions in Silicon
40. HgCdTe charge-coupled device technology
41. Modeling diffusion and collection of charge from ionizing radiation in silicon devices
42. 2 interface
43. Monolithic n-channel HgCdTe linear imaging arrays
44. Review of Schottky-barrier imager technology
45. LWIR 128 × 128 GaAs/AlGaAs multiple quantum well hybrid focal plane aarray
46. 1-xAs quantum well infrared photodetectors (QWIPs)
47. Imaging charge-coupled device (CCD) transient response to 17 MeV proton and heavy-ion irradiation
48. Event recognition techniques in CCD x-ray detectors for astronomy
49. Proton-induced displacement damage distributions and extremes in silicon microvolumes
50. Proton neutron and electron-induced displacement damage in germanium
51. Displacement damage extremes in silicon depletion regions
52. Charge generation, transport, and trapping
53. Energetic electron-induced impurity ionization in Si:As detectors
54. Ionizing radiation effects of HgCdTe MIS devices
55. Passivation of mercury cadmium telluride surfaces
56. Tunneling and dark currents in HgCdTe photodiodes
57. On-array spike suppression signal processing
58. 2 films
59. An overview of radiation-induced interface traps in MOS structures
60. Design of III-V quantum well structures for long-wavelength detector applications
61. + polysilicon gate CMOS transistors
62. Development of algorithms for on-focal plane gamma circumvention and time delay integration
63. Low-Level Radiation Effects in Extrinsic Infrared Detectors
64. Nuclear Radiation Induced Noise in Infrared Detectors
65. Blocked impurity band hybrid infrared focal plane arrays for astronomy
66. Degradation of the charge transfer efficiency of a buried channel charge-coupled device due to radiation damage by a beta source
67. Radiation damage effects on imaging charge coupled devices
68. A technique for suppressing dark current generated by interface states in buried channel CCD imagers
69. Radiation Effects in N-Channel MNOS CCDs at Low Temperature
70. Formation of interface traps in MOSFETS during annealing following low temperature irradiation
71. Degradation mechanisms of gamma irradiated LWIR HgCdTe photovoltaic detectors
72. Latent thermally activated interface—trap generation in MOS devices
73. Ionizing radiation hardening of CCD technology
74. Enhanced displacement damage effectiveness in irradiated silicon devices
75. Displacement damage in GaAs structures
76. Infrared absorption studies of the divacancy in silicon: new properties of the singly negative charge state
77. CCD guidance system for the William Herschel Telescope
78. Modeling photovoltaic infrared transient response to pulsed gamma radiation
79. 252Cf irradiated silicon diodes
80. (Hg Zn) Te among the other materials for IR detection
81. Ion-implantation associated defect production in silicon
82. 1-x/Si heterojunction infrared detectors and 400 × 400 element imager arrays
83. Ionizing radiation dosimetry and noise in small geometry devices
84. High performance (HgCd)Te heterostructure photodiode arrays with improved radiation hardening
85. Ionizing Radiation Effects in N-Channel (Hg,Cd) Te MISFETs with Anodic Sulfide Passivation
86. Radiation induced interface states
87. The effect of sea level cosmic rays on electronic devices