Predicting end-of-life performance of microelectronics in space

Radiation Physics and Chemistry

Volumn 43, Issue 1-2, 1994, Pages 57-77

  Holmes Siedle, Andrew ^a  

^a BRUNEL UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

MOS DEVICES; PERFORMANCE; RADIATION EFFECTS; SERVICE LIFE; SPACE APPLICATIONS;

END OF LIFE PERFORMANCE;

MICROELECTRONICS;

ARTICLE; CONTROLLED STUDY; ELECTRONICS; RADIATION EXPOSURE; SPACE FLIGHT;

EID: 0028158954     PISSN: 0969806X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0969-806X(94)90202-X     Document Type: Article

References (66)

1. La survie de l'electronique dans l'espace
2. Consultation document—A specification for total-dose irradiation of semiconductor components
3. Post irradiation effects (PIE) in integrated circuits
4. pMOS Dosimeters: Long-Term Annealing and Neutron Response
5. Enhanced Flatband Voltage Recovery in Hardened Thin MOS Capacitors
6. Saturation of Threshold Voltage Shift in MOSFET's at High Total Dose
7. A survey of reliability prediction procedures for microelectronic devices
8. Atomic displacement and total ionizing dose damage in semiconductors
9. Proton and electron permanent damage in silicon semiconductor devices
10. Space radiation equivalence for effects on bipolar transistors
11. Application of a model for treatment of time dependent effects on irradiation of microelectronic devices
12. Correlation of radiation damage in silicon transistors bombarded by electrons, protons and neutrons
13. High-Energy Radiation Damage in Silicon Transistors
14. The Damage Equivalence of Electrons, Protons, and Gamma Rays in MOS Devices
15. Displacement damage in Si imagers for space applications
16. The Effects of Test Conditions on MOS Radiation-Hardness Results
17. Response of advanced bipolar processes to ionizing radiation
18. Radiation design handbook
19. Hardness assurance for low-dose space applications
20. Predicting switched-bias response from steady-state irradiations
21. An improved standard total dose test for CMOS space electronics
22. A Simple Model for Predicting Radiation Effects in MOS Devices
23. Proton damage effects in EEV charge coupled devices
24. Techniques for minimizing space proton damage in scientific charge-coupled devices
25. Radiation problems in the use of charge-coupled devices in space
26. The Mechanisms of Small Instabilities in Irradiated MOS Transistors
27. Hole traps in silicon dioxide: a comparison of population by X-rays and band-gap light
28. The design of a weather satellite to withstand the radiation environment
29. Limitation of the effects of radiation damage in charge coupled devices by control of operating conditions
30. Radiation effects on solid state imaging devices
31. Correlation between channel hot-electron degradation and radiation induced interface trapping in N-channel LDD devices
32. The effects of proton damage on charge-coupled devices
33. Effects of Total Dose Ionizing, Radiation on the 1802 Microprocessor
34. The nature of the trapped hole annealing process
35. 2 gate insulators
36. Electron-hole generation, transport and trapping in SiO2
37. Modeling the anneal of radiation-induced trapped holes in a verying thermal environment
38. Correlation between channel hot-electron degradation and radiation-induced interface trapping in n-channel LDD devices
39. Hardness assurance for space system microelectronics
40. A Prediction and Selection System for Radiation Effects in Planar Transistors
41. Permanent Radiation Effects in Complementary-Symmetry MOS Integrated Circuits
42. The Long-Term Effects of Radiation on Complementary MOS Logic Networks
43. Hardening of MJS77 Spacecraft against the Jupiter Radiation Belts
44. + motion during interface trap formation
45. Effects of switched gate bias on radiation induced induced interface trap formation
46. Strategies for lot acceptance testing using CMOS transistors and ICs
47. Field dependence of the interface state density and the trapped positive charge
48. Post irradiation effects (PIE) in integrated circuits
49. Dielectric integrity of the gate oxide in SOS devices
50. Short-comings in ground testing, environment simulation and performance prediction for space applications
51. Total-Dose and Dose-Rate Dependence of Proton Damage in MOS Devices during and after Irradiation
52. Radiation Effects on MOS Devices: Dosimetry, Annealing, Irradiation Sequence, and Sources
53. The Damage Equivalence of Electrons, Protons, Alphas and Gamma Rays in Rad-Hard MOS Devices
54. MIL reliability: a new approach
55. Radiation-hardened microelectronics for space application
56. Predicting CMOS Inverter Response in Nuclear and Space Environments
57. Implementing QML for radiation hardness assurance
58. Submicrometer salicide CMOS devices with self-aligned shallow/deep junctions