Modeling the Optical Switching of MESFET's Considering the External and Internal Photovoltaic Effects

IEEE Transactions on Microwave Theory and Techniques

Volumn 42, Issue 1, 1994, Pages 62-67

  Paolella, Arthur ^b   Herczfeld, Peter R ^b  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b DREXEL UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; MICROWAVE DEVICES; OPTICAL SWITCHES; PHOTOVOLTAIC EFFECTS;

FEASIBILITY; OPTICAL SWITCHING;

MESFET DEVICES;

EID: 0028014214     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.265529     Document Type: Article

References (9)

1. A. Madjar, P. R. Herczfeld, and A. Paolella, “Analytical model for optically generated currents in GaAs MESFETs,” IEEE Trans. Microwave Theory Tech., pp. 1681–1691, Aug. 1992.
2. C. Baak, G. Elze, and G. Walf, “GaAs MESFET: A high-speed optical detector,” Electron. Lett., vol. 13, Mar. 1977.
3. D. Brinker and E. Wang, “GaAs MIS solar cells with evaporated tin oxide interfacial layers,” IEEE Trans. Electron Devices, vol. ED-28, pp. 1097–1098, Sept. 1981.
4. D. G. Parker, “Use of transparent indium tin oxide to form a highly efficient 20 GHz Schottky barrier photodiode,” Electron. Lett., vol. 21, p. 778, 1985.
5. J. C. Gammel and J. M. Ballantyne, “An integrated photoconductive detector and waveguide structure,” Appl. Phys. Lett., vol. 36, pp. 149–151, Jan. 1980.
6. J. E. Leistad and T. A. Fjeldy, “Photoresponse of GaAs MESFET inverters by pulsed laser illumination,” Microwave Opt. Technol. Lett., vol. 2, pp. 244–247, July 1989.
7. A. Paollela, A. Madjar, P. R. Herczfeld, and D. Sturzebecher, “Optically controlled GaAs MMIC switch using a MESFET as an optical detector,” in 1990 Int. Microwave Symp. Dig., Dallas, TX, May 1990.
8. A. Madjar, P. R. Herczfeld, and A. Paollela, “An analytical model for the optically illuminated GaAs MESFETs,” in 1990 Sarnoff Symp. Dig., Princeton, NJ, Mar. 1990.
9. A. A. A. De Salles, “Optical control of GaAs MES1FETs,” IEEE Trans. Microwave Theory Tech., vol. MTT-31, pp. 812–820, Oct. 1983