Very low noise and low power operation of cryogenic AlInAs/GaInAs/InP HFET's

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1994, Pages 1345-1346

  Pospieszalski, Marian W ^a   Nguyen, Loi D ^a   Lui, Mark ^a   Liu, Takyiu ^a   Thompson, Mark A ^a   Delaney, Michael J ^a  

^a NATIONAL RADIO ASTRONOMY OBSERVATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENIC EQUIPMENT; ELECTRIC NETWORK PARAMETERS; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRIC VARIABLES MEASUREMENT; PERFORMANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE; THERMAL EFFECTS;

CRYOGENIC PERFORMANCE; OPTIMAL NOISE BIAS CONDITION;

FIELD EFFECT TRANSISTORS;

EID: 0027990036     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)