Optical response of a pseudomorphic HFET photodetector up to 10 GHz

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1994, Pages 1395-1398

  Bangert, A ^a   Rosenzweig, J ^a   Ludwig, M ^a   Bronner, W ^a   Hofmann, P ^a   Koehler, K ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; PHOTODETECTORS; PHOTOSENSITIVITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR SUPERLATTICES;

ALUMINUM GALLIUM ARSENIDE; BUFFER LAYERS; OPTICAL RESPONSE; PSEUDOMORPHIC HETEROSTRUCTURE FIELD EFFECT TRANSISTOR; TRAPS;

MICROWAVE DEVICES;

EID: 0027929575     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)