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Physical Review Letters

Volumn 72, Issue 3, 1994, Pages 416-419

Optical properties of manganese-doped nanocrystals of ZnS

(4) Bhargava, R N a Gallagher, D a Hong, X b Nurmikko, A b

a PHILIPS RESEARCH LABORATORIES (Netherlands)

b BROWN UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; CRYSTALS; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ELECTRONS; IONS; LIGHT EMISSION; MANGANESE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM THEORY; SPECTRUM ANALYSIS;

ELECTRON HOLE INTERACTION; ELECTRONIC EXCITATION; LUMINESCENT CENTER; NANOCRYSTALS; QUANTUM EFFICIENCY;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0027927336 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.72.416 Document Type: Article

Times cited : (2066)

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- The capture rate at the impurity 1/ τR= N σ cthetat h where sigma is the cross section, cthetath is the thermal velocity, and N is the number of impurities per unit volume. We assume that in these nanocrystals there is only one impurity per nanocrystal based on the doping concentration; more would cause concentration quenching of luminescence.

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