Thermoluminescence spectra of doped Bi4Ge3O12

Radiation Measurements

Volumn 23, Issue 1, 1994, Pages 195-202

  Raymond, S G ^a   Luff, B J ^a   Townsend, P D ^a   Feng, Xiqi ^b   Hu, Guanqing ^b  

^a UNIVERSITY OF SUSSEX   (United Kingdom)

^b SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; DEFECTS; DOPING (ADDITIVES); DOSIMETRY; EMISSION SPECTROSCOPY; IMPURITIES; IONS; OXYGEN; RADIATION EFFECTS; RARE EARTH ELEMENTS; THERMAL EFFECTS;

BISMUTH GERMANATE; CHARGE TRANSFER; RECOMBINATION CENTERS; TRAPPING LEVELS;

THERMOLUMINESCENCE;

EID: 0027927082     PISSN: 13504487     EISSN: None     Source Type: Journal    
DOI: 10.1016/1350-4487(94)90035-3     Document Type: Article

References (16)

1. Temperature distribution in thermoluminescence experiments
2. 12
3. 12
4. 12 single crystal scintillators
5. BGO radiation damage effects: optical absorption, thermoluminescence and thermoconductivity
6. High sensitivity thermoluminescence spectrometer
7. Optical properties of bismuth germanate [BGO (2:3)] waveguides formed by ion implantation
8. 20 produced by ion implantation
9. 12 waveguides by ion implantation
10. Thermoluminescence and radiation damage in bismuth germanate
11. 12 crystals in the ultraviolet spectral range
12. 12
13. Spectral measurements during thermoluminescence
14. Radiation resistance and fluorescence of europium doped BGO crystals
15. 12 single crystals
16. 12 scintillators after low temperature X-ray irradiation